Sapphire Growing Methods Comparison

Sapphire Crystal Growing Methods Comparison

Growing Method

Advantages

Disadvantages

Application

Kyropoulos

High quality, Large size, High yield, Low cost

Complicate operation, Low consistency, low qualified yield, Not suitable for C sapphire

Rublcon (LED sapphire base)

Czochralski

Production examination easily, Good Shape

High density, iridium gold crucible, High cost, Size restriction

HoneyWell

EFG

High quality

Complicated Equipment and technology

Kyocera

TGT

Simple equipment, easy operation, high yield, C crystal

Uniformity temperature, long period, high cost

Shanghai Institute of Optics and Fine Mechanics

VGF

Simple equipment, high yield

High density

Yunnan, China

Crystal size and shape are not restricted

Right is kept in STC

STC

HEM

High quality, large size

High requirement on equipment, complicated techniques, high cost, sapphire easier to break

Crystal System

SAPMAC

Entire crystal, annealing same location, short circle, low cost

Easily influenced by temperature fluctuation

Northeast China